Chang-Po Hsiung

This inventor holds 17 USPTO granted patents and 4 published patent applications, primarily in Semiconductor Technology. Top assignee: United Microelectronics Corp.. Active years: 2016-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chang-Po Hsiung. Retrieved from https://idiyas.com/inventor/chang-po-hsiung

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 17 (Patent Applications = 4)

% Patents Active = 100.0

Average Co-Inventor Count = 3.2

ph-index = 3

Forward Citations = 22(Granted Patents)

Company Filing History:

17 out of 7,285

United Microelectronics Corp.

patents

Years Active: 2016-2025

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Areas of Expertise:

Semiconductor Structure

High Voltage Device

MOSFET

Transistor

Dual Spacer

Shallow Trench Isolation

Fabrication Method

Manufacturing Method

Device Formation

Field-Effect Transistor

Semiconductor Packaging

Edge Profile

17 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12426353 - Semiconductor structure (2025-09-23),

2. 12310083 - Semiconductor device and method for forming the same (2025-05-20),

3. 12206020 - High voltage semiconductor device (2025-01-21),

4. 12080794 - Manufacturing method of high voltage semiconductor device (2024-09-03),

5. 11735586 - Semiconductor structure (2023-08-22),

6. 11682726 - High voltage semiconductor device and manufacturing method thereof (2023-06-20),

7. 11495681 - Semiconductor device and manufacturing method thereof (2022-11-08),

8. 11437512 - Buried channel metal-oxide-semiconductor field-effect transistor (MOSFET) and forming method thereof (2022-09-06),

9. 11217693 - Semiconductor transistor and fabrication method thereof (2022-01-04),

10. 10475903 - Method of forming transistor with dual spacer (2019-11-12),

11. 10453938 - Transistor with dual spacer and forming method thereof (2019-10-22),

12. 10411088 - Semiconductor device (2019-09-10),

13. 10276710 - High voltage transistor and fabrication method thereof (2019-04-30),

14. 9972678 - Semiconductor device and method of forming the same (2018-05-15),

15. 9653343 - Method of manufacturing semiconductor device with shallow trench isolation (STI) having edge profile (2017-05-16),

Title: The Innovative Journey of Chang-Po Hsiung

Introduction:

Chang-Po Hsiung, a distinguished inventor hailing from Hsinchu, Taiwan, has made significant contributions to the field of technology and innovation.

Latest Patents:

Chang-Po Hsiung's latest patents focus on advancements in semiconductor technology, particularly in the development of cutting-edge microchips for various electronic devices.

Career Highlights:

With a career spanning over two decades, Chang-Po Hsiung has worked tirelessly to push the boundaries of technological innovation. His work has led to numerous breakthroughs in the semiconductor industry, earning him recognition as a pioneer in his field.

Collaborations:

Throughout his career, Chang-Po Hsiung has collaborated with leading tech companies and research institutions to further his research and bring his inventions to life. His collaborative efforts have resulted in the successful development of groundbreaking technologies that have revolutionized the industry.

Conclusion:

In conclusion, Chang-Po Hsiung's passion for innovation and dedication to his craft have solidified his reputation as a trailblazer in the world of technology. His relentless pursuit of excellence continues to inspire future generations of inventors and innovators.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

4 patents pending: