The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2022
Filed:
Jul. 21, 2020
Buried channel metal-oxide-semiconductor field-effect transistor (mosfet) and forming method thereof
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventor:
Chang-Po Hsiung, Hsinchu, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7838 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 29/7834 (2013.01);
Abstract
A buried channel MOSFET includes a dielectric layer, a gate and a buried channel region. The dielectric layer having a recess is disposed on a substrate. The gate is disposed in the recess, wherein the gate includes a first work function metal layer having a '-' shaped cross-sectional profile, and a minimum distance between each sidewalls of the first work function metal layer and the nearest sidewall of the recess is larger than zero. The buried channel region is located in the substrate right below the gate. The present invention provides a method of forming said buried channel MOSFET.