The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2019
Filed:
Apr. 12, 2018
United Microelectronics Corp., Hsinchu, TW;
Chang-Po Hsiung, Hsinchu, TW;
Ping-Hung Chiang, Hsinchu, TW;
Shih-Chieh Pu, New Taipei, TW;
Chia-Lin Wang, Yunlin County, TW;
Nien-Chung Li, Hsinchu, TW;
Wen-Fang Lee, Hsinchu, TW;
Shih-Yin Hsiao, Chiayi County, TW;
Chih-Chung Wang, Hsinchu, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A semiconductor device including a substrate and a shallow trench isolation (STI) structure is provided. The substrate has a first voltage area and a second voltage area. A top surface of the substrate in the second voltage area is higher than a top surface of the substrate in the first voltage area, and a trench is defined in the substrate in between the first and second voltage area. The STI structure is located in the substrate within the trench, wherein a first portion of the STI structure is located in the first voltage area, a second portion of the STI structure is located in the second voltage area, and a step height difference exist in between a bottom surface of the first portion of the STI structure in the first voltage area and a bottom surface of the second portion of the STI structure in the second voltage area.