The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2019
Filed:
Dec. 18, 2017
United Microelectronics Corp., Hsin-Chu, TW;
Chia-Ling Wang, Yunlin County, TW;
Ping-Hung Chiang, Hsinchu, TW;
Chang-Po Hsiung, Hsinchu, TW;
Chia-Wen Lu, Chiayi County, TW;
Nien-Chung Li, Hsinchu, TW;
Wen-Fang Lee, Hsinchu, TW;
Chih-Chung Wang, Hsinchu, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A transistor with dual spacers includes a gate, a first dual spacer and a second inner spacer. The gate is disposed on a substrate, wherein the gate includes a gate dielectric layer and a gate electrode, and the gate dielectric layer protrudes from the gate electrode and covers the substrate. The first dual spacer is disposed on the gate dielectric layer beside the gate, wherein the first dual spacer includes a first inner spacer and a first outer spacer. The second inner spacer having an L-shaped profile is disposed on the gate dielectric layer beside the first dual spacer. The present invention also provides a method of forming said transistor with dual spacers.