The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2018
Filed:
Oct. 06, 2016
United Microelectronics Corp., Hsinchu, TW;
Chang-Po Hsiung, Hsinchu, TW;
Ping-Hung Chiang, Hsinchu, TW;
Shih-Chieh Pu, New Taipei, TW;
Chia-Lin Wang, Yunlin County, TW;
Nien-Chung Li, Hsinchu, TW;
Wen-Fang Lee, Hsinchu, TW;
Shih-Yin Hsiao, Chiayi County, TW;
Chih-Chung Wang, Hsinchu, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method of forming a semiconductor device is provided including the following steps. A substrate having a first voltage area and a second voltage area is provided. A first oxide layer is formed in the first voltage area. The first oxide layer is removed to form a recess in the first voltage area. A shallow trench isolation (STI) structure is formed in the substrate, wherein a first portion of the STI structure is located in the first voltage area and a second portion of the STI structure is located in the second voltage area, a top surface of the STI structure is higher than the top surface of the substrate, and a bottom surface of the first portion of the STI structure in the first voltage area is lower than a bottom surface of the second portion of the STI structure in the second voltage area.