Brian E Roberds

This inventor holds 28 USPTO granted patents and 2 published patent applications, primarily in MOS Transistor Technology. Top assignees: Intel Corporation, Silicon Genesis Corporation. Active years: 2001-2009.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Brian E Roberds. Retrieved from https://idiyas.com/inventor/brian-e-roberds

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 28 (Patent Applications = 2)

% Patents Active = 71.4

Average Co-Inventor Count = 2.3

ph-index = 16

Forward Citations = 1,634(Granted Patents)

Location History:

Santa Clara, CA (US) (2001 - 2005)
Beaverton, OR (US) (2002 - 2005)
Escondido, CA (US) (2003 - 2009)

Company Filing History:

Silicon Genesis Corporation

patents

Years Active: 2001-2009

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Areas of Expertise:

High Mobility Channels

MOS Transistors

Plasma Wafer Bonding

Dynamic Threshold Voltage

Silicon-on-Insulator

Gate Electrode Engineering

Short Channel Effects

Nanoscale Structures

Interfacial Layer

Capacitance Interconnects

Strain Layer

Isolation Techniques

28 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 7615465 - Creation of high mobility channels in thin-body SOI devices (2009-11-10),

2. 7485541 - Creation of high mobility channels in thin-body SOI devices (2009-02-03),

3. 7067386 - Creation of high mobility channels in thin-body SOI devices (2006-06-27),

4. 6952040 - Transistor structure and method of fabrication (2005-10-04),

5. 6908832 - In situ plasma wafer bonding method (2005-06-21),

6. 6873013 - Silicon-on-insulator structure and method of reducing backside drain-induced barrier lowering (2005-03-29),

7. 6815310 - Technique to obtain high mobility channels in MOS transistors by forming a strain layer on an underside of a channel (2004-11-09),

8. 6809017 - Interfacial layer for gate electrode and high-k dielectric layer and methods of fabrication (2004-10-26),

9. 6740913 - MOS transistor using mechanical stress to control short channel effects (2004-05-25),

10. 6717213 - Creation of high mobility channels in thin-body SOI devices (2004-04-06),

11. 6656822 - Method for reduced capacitance interconnect system using gaseous implants into the ILD (2003-12-02),

12. 6653700 - Transistor structure and method of fabrication (2003-11-25),

13. 6645828 - In situ plasma wafer bonding method (2003-11-11),

14. 6642133 - Silicon-on-insulator structure and method of reducing backside drain-induced barrier lowering (2003-11-04),

15. 6638835 - Method for bonding and debonding films using a high-temperature polymer (2003-10-28),

Title: The Innovative Contributions of Brian E. Roberds

Introduction

Brian E. Roberds, based in Escondido, CA, is an esteemed inventor known for his substantial contributions to semiconductor technology. With a remarkable portfolio of 28 patents, he has significantly impacted the field of silicon-on-insulation (SOI) devices.

Latest Patents

Among his latest innovations, Roberds has developed a method for creating high mobility channels in thin-body SOI devices. This methodology involves fabricating a strained silicon film to a silicon-on-insulation (SOI) wafer. In this process, a layer of oxide is deposited onto a wafer with a stack structure consisting of a first base substrate, a layer of relaxed film, and a second layer of strained film. The SOI wafer itself comprises a stack structure of a second base substrate and an oxidized film layer. By attaching the SOI wafer to the aforementioned wafer and heating it at an initial temperature, a silicon dioxide (SiO) dangling bond is formed on the SOI wafer’s second base substrate, effectively transferring the strained film from one wafer to another.

Career Highlights

Throughout his career, Brian Roberds has made noteworthy advancements while working with prominent companies. He has held significant roles at Intel Corporation and Silicon Genesis Corporation, where his work focused on enhancing semiconductor technologies.

Collaborations

Roberds has collaborated with several notable professionals in his field, including Brian S. Doyle and Robert S. Chau. These partnerships have allowed for innovative breakthroughs and furthered the development of advanced semiconductor solutions.

Conclusion

Brian E. Roberds exemplifies the spirit of innovation with his extensive patent portfolio and contributions to the field of technology. His inventive methods have paved the way for advancements in thin-body SOI devices, marking him as a significant figure in the semiconductor industry. His work continues to inspire future developments and innovations.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

2 patents pending: