The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2003
Filed:
Jun. 28, 1999
Applicant:
Inventors:
Brian S. Doyle, Cupertino, CA (US);
Brian Roberds, Santa Clara, CA (US);
Sandy S. Lee, Palo Alto, CA (US);
Quat Vu, Santa Clara, CA (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1265 ; H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/1265 ; H01L 2/1336 ;
Abstract
A method of decreasing the dielectric constant of a dielectric layer. First, a dielectric layer is formed on a first conductive layer. A substance is then implanted into the dielectric layer.