The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2009
Filed:
Apr. 13, 2006
Brian S. Doyle, Portland, OR (US);
Brian E. Roberds, Escondido, CA (US);
Brian S. Doyle, Portland, OR (US);
Brian E. Roberds, Escondido, CA (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A method for fabricating a strained silicon film to a silicon on insulation (SOI) wafer. A layer of oxide is deposited onto a wafer that has a stack structure of a first base substrate, a layer of relaxed film=and a second layer of strained film. The SOI wafer has a stack structure of a second base substrate and a layer of oxidized film. The SOI wafer is attached to the wafer and is heated at a first temperature. This causes a silicon dioxide (SiO) dangling bond to form on the second base substrate of the SOI wafer, transferring the strained film from one wafer to the other.