The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2003
Filed:
Dec. 20, 2001
Brian Roberds, Escondido, CA (US);
Doulgas W. Barlage, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
The invention relates to a transistor that includes a semiconductive layer on an insulator layer. Below the insulator layer is a substrate and a contact is disposed in the insulator layer that originates at the substrate and terminates in the insulator layer. The contact is aligned below the transistor junction. The invention also relates to a process flow that is used to fabricate the transistor. The process flow includes forming the contact by either a spacer etch or a directional, angular etch.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile