Hsinchu, Taiwan

An-Chyi Wei

USPTO Granted Patents = 9 

Average Co-Inventor Count = 4.5

ph-index = 2

Forward Citations = 10(Granted Patents)


Company Filing History:


Years Active: 2008-2024

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9 patents (USPTO):

Title: An-Chyi Wei: Innovator in FinFET Technology

Introduction

An-Chyi Wei is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of Fin Field Effect Transistor (FinFET) structures. With a total of nine patents to his name, Wei's work has had a substantial impact on the industry.

Latest Patents

One of Wei's latest patents is a method for forming a FinFET device structure. This innovative method includes the formation of a first fin structure and a second fin structure over a substrate. It also involves creating a liner layer over both fin structures and forming an isolation layer over the liner layer. The process further includes the removal of portions of the liner layer and the isolation layer, resulting in a liner layer that features a first liner layer on the outer sidewall surface of the first fin structure and a second liner layer on the inner sidewall surface of the first fin structure. Notably, the top surface of the second liner layer is higher than that of the first liner layer.

Career Highlights

An-Chyi Wei has worked with leading companies in the semiconductor industry, including Taiwan Semiconductor Manufacturing Company Limited and Macronix International Co., Ltd. His experience in these organizations has allowed him to refine his expertise in semiconductor fabrication and device architecture.

Collaborations

Throughout his career, Wei has collaborated with notable colleagues such as Chung-Shu Wu and Shu-Uei Jang. These partnerships have contributed to the advancement of FinFET technology and have fostered innovation within the field.

Conclusion

An-Chyi Wei's contributions to FinFET technology and his extensive patent portfolio underscore his role as a key innovator in the semiconductor industry. His work continues to influence advancements in device structures and fabrication methods.

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