The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2016
Filed:
Sep. 22, 2014
Applicant:
Macronix International Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
MACRONIX INTERNATIONAL CO., LTD., Hsinchu, TW;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/76 (2006.01); H01L 27/088 (2006.01); H01L 27/115 (2006.01); H01L 29/51 (2006.01); H01L 21/768 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01L 21/3205 (2006.01); H01L 29/423 (2006.01); H01L 29/792 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11568 (2013.01); H01L 21/31111 (2013.01); H01L 21/32051 (2013.01); H01L 21/32053 (2013.01); H01L 21/32139 (2013.01); H01L 21/76802 (2013.01); H01L 21/76831 (2013.01); H01L 21/76877 (2013.01); H01L 23/528 (2013.01); H01L 29/4234 (2013.01); H01L 29/513 (2013.01); H01L 29/518 (2013.01); H01L 29/792 (2013.01);
Abstract
A semi-damascene method is described for fabricating wordlines without stringers while maintaining critical cell dimensions when wordline pitch is less than 40 nm. A thin conducting layer protects a storage layer during manufacture, the thin conducting layer then making contact with filled-in conducting material.