The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2008
Filed:
Feb. 22, 2006
Hong-ji Lee, Gueishan Township, TW;
Shih-ping Hong, Taichung, TW;
An-chyi Wei, Hsinchu, TW;
MACRONIX International Co., Ltd., Hsinchu, TW;
Abstract
Methods are described which comprise: providing a plasma etching apparatus having an etching chamber; disposing a substrate to be etched in the chamber; introducing Ngas and one or more process gases into the chamber; and etching the substrate, wherein the introduction of the Ngas is stopped prior to etching, and wherein etching comprises an initial plasma ignition wherein at least a portion of the Ngas remains present in the chamber during initial plasma ignition. Additional methods are described which comprise: providing a plasma etching apparatus having an etching chamber; disposing a substrate to be etched in the chamber; introducing Ngas and one or more process gases into the chamber; applying power to an electrode in the chamber such that an Nmemory species is formed; and etching the substrate, where the introduction of the Ngas into the chamber can be stopped prior to etching. Other methods are also described which comprise: providing a plasma etching apparatus having an etching chamber; disposing a substrate to be etched in the chamber; introducing Ngas into the chamber; applying power to an electrode in the chamber such that an Nmemory species is formed; removing the applied power from the electrode in the chamber; stopping the introduction of the Ngas into the chamber and introducing one or more process gases into the chamber; and etching the substrate.