The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2019
Filed:
Aug. 04, 2017
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chung-Shu Wu, Taoyuan, TW;
Shu-Uei Jang, Hsinchu, TW;
Wei-Yeh Tang, Taoyuan, TW;
Ryan Chia-Jen Chen, Chiayi, TW;
An-Chyi Wei, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A FinFET device structure and method for forming the same are provided. The FinFET device structure includes a first fin structure extending above a substrate, and the first fin structure includes a portion made of silicon germanium (SiGe). The FinFET device structure includes a second fin structure adjacent to the first fin structure. The FinFET device structure also includes a first liner layer formed on the outer sidewall surface of the first fin structure and a second liner layer formed on the inner sidewall surface of the first fin structure. The FinFET device structure further includes a first isolation structure formed on the substrate, and the first liner layer is between the first isolation structure and the first fin structure, and a top surface of the second liner layer is higher than a top surface of the first liner layer.