Alexander Viktorovich Bolotnikov

USPTO Granted Patents = 47 (Patent Applications = 10)

CIPO Patents = 5

EPO Patents = 11 (Patent Applications = 32)

Average Co-Inventor Count = 3.2

ph-index = 4

Forward Citations = 65(Granted Patents)

Location History:

Brooklyn, NY (US) (2019)
Niskayuna, NY (US) (2014 - 2023)

Company Filing History:

44 out of 51,873

General Electric Company

University of South Carolina

patents

4. 1 out of 3,590

Semiconductor Components Industries, LLC

patents

where one patent can have more than one assignee

Years Active: 2014-2025

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47 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 12396187 - Diodes with schottky contact including localized surface regions (2025-08-19),

2. 12191384 - Techniques for fabricating charge balanced (CB) trench-metal-oxide-semiconductor field-effect transistor (MOSFET) devices (2025-01-07),

3. 11764257 - Systems and methods for junction termination of wide band gap super-junction power devices (2023-09-19),

4. 11271076 - Systems and methods for junction termination in semiconductor devices (2022-03-08),

5. 11245003 - Systems and methods for junction termination of wide band gap super-junction power devices (2022-02-08),

6. 11233157 - Systems and methods for unipolar charge balanced semiconductor power devices (2022-01-25),

7. 11069772 - Techniques for fabricating planar charge balanced (CB) metal-oxide-semiconductor field-effect transistor (MOSFET) devices (2021-07-20),

8. 11063115 - Semiconductor device and method of making thereof (2021-07-13),

9. 11056586 - Techniques for fabricating charge balanced (CB) trench-metal-oxide-semiconductor field-effect transistor (MOSFET) devices (2021-07-06),

10. 11031472 - Systems and methods for integrated diode field-effect transistor semiconductor devices (2021-06-08),

11. 10957759 - Systems and methods for termination in silicon carbide charge balance power devices (2021-03-23),

12. 10937870 - Electric field shielding in silicon carbide metal-oxide-semiconductor (MOS) device cells using body region extensions (2021-03-02),

13. 10636660 - Super-junction semiconductor device fabrication (2020-04-28),

14. 10608079 - High energy ion implantation for junction isolation in silicon carbide devices (2020-03-31),

15. 10600871 - Electric field shielding in silicon carbide metal-oxide-semiconductor (MOS) device cells using body region extensions (2020-03-24),

Title: Alexander Viktorovich Bolotnikov - Innovative Inventor from Niskayuna

Introduction: Alexander Viktorovich Bolotnikov is a renowned inventor based in Niskayuna, NY, known for his groundbreaking contributions to various technological fields.

Latest Patents: Bolotnikov holds several patents in the areas of renewable energy, advanced materials, and nanotechnology, showcasing his continuous innovation and commitment to technological advancement.

Career Highlights: With a career spanning over two decades, Bolotnikov has worked with leading research institutions and companies to develop cutting-edge solutions that have had a significant impact on the industry. His expertise in materials science and engineering has led to the development of novel technologies that have revolutionized multiple sectors.

Collaborations: Bolotnikov has collaborated with top universities, research institutions, and companies worldwide to further his research and bring his inventions to life. His collaborative efforts have resulted in the successful commercialization of several patented technologies.

Conclusion: Alexander Viktorovich Bolotnikov's relentless pursuit of innovation and his passion for pushing the boundaries of technology have solidified his position as a pioneering inventor in the field. His contributions continue to inspire future generations of inventors and researchers.

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