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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11069772 B1

PDFFull Text
Date of Patent:
Jul. 20, 2021

Filed:

Dec. 14, 2018

Techniques for fabricating planar charge balanced (cb) metal-oxide-semiconductor field-effect transistor (mosfet) devices

Applicant:

General Electric Company, Schenectady, NY (US);

Inventors:

Stephen Daley Arthur, Glenville, NY (US);

Reza Ghandi, Niskayuna, NY (US);

Alexander Viktorovich Bolotnikov, Niskayuna, NY (US);

David Alan Lilienfeld, Niskayuna, NY (US);

Peter Almern Losee, Clifton Park, NY (US);

Assignee:

GENERAL ELECTRIC COMPANY, Niskayuna, NY (US);

Attorney:

Fletcher Yoder, P.C.

Primary Examiner:

Kenneth Parker

Assistant Examiner:

Long H Le

Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0634 (2013.01); H01L 29/0623 (2013.01); H01L 29/0692 (2013.01); H01L 29/41766 (2013.01); H01L 29/42376 (2013.01); H01L 29/7832 (2013.01);
Abstract

Aspects of the present disclosure are directed toward designs and methods of manufacturing semiconductor devices, such as semiconductor charge balanced (CB) devices or semiconductor super-junction (SJ) devices. The disclosed designs and methods are useful in the manufacture of CB devices, such as planar CB metal-oxide semiconductor field-effect transistor (MOSFET) devices, as well as other devices.

Find Patent Forward Citations

Arthur, Stephen. (2021). Techniques for fabricating planar charge balanced (cb) metal-oxide-semiconductor field-effect transistor (mosfet) devices (U.S. Patent No. 11069772). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11069772

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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