The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 2022
Filed:
Sep. 28, 2018
General Electric Company, Schenectady, NY (US);
Stephen Daley Arthur, Glenville, NY (US);
Alexander Viktorovich Bolotnikov, Niskayuna, NY (US);
Reza Ghandi, Niskayuna, NY (US);
David Alan Lilienfeld, Niskayuna, NY (US);
Peter Almern Losee, Clifton Park, NY (US);
GENERAL ELECTRIC COMPANY, Niskayuna, NY (US);
Abstract
A charge balance (CB) field-effect transistor (FET) device may include a CB layer defined in a first epitaxial (epi) layer having a first conductivity type. The CB layer may include a set of CB regions having a second conductivity type. The CB FET device may further include a device layer defined in a device epi layer having the first conductivity type disposed on the CB layer. The device layer may include a highly-doped region having the second conductivity type. The CB FET device may also include a CB bus region having the second conductivity type that extends between and electrically couples a CB region of the set of CB regions of the CB layer to the highly-doped region of the device layer.