The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2022
Filed:
Jul. 19, 2019
General Electric Company, Schenectady, NY (US);
Stephen Daley Arthur, Glenville, NY (US);
Victor Mario Torres, Clifton Park, NY (US);
Michael J. Hartig, Schenectady, NY (US);
Reza Ghandi, Niskayuna, NY (US);
David Alan Lilienfeld, Niskayuna, NY (US);
Alexander Viktorovich Bolotnikov, Niskayuna, NY (US);
GENERAL ELECTRIC COMPANY, Niskayuna, NY (US);
Abstract
The subject matter disclosed herein relates to semiconductor power devices and, more specifically, to junction termination designs for wide-bandgap (e.g., silicon carbide) semiconductor power devices. A disclosed semiconductor device includes a first epitaxial (epi) layer disposed on a substrate layer, wherein a termination area of the first epi layer has a minimized epi doping concentration of a first conductivity type (e.g., n-type). The device also includes a second epi layer disposed on the first epi layer, wherein a termination area of the second epi layer has the minimized epi doping concentration of the first conductivity type and includes a first plurality of floating regions of a second conductivity type (e.g., p-type) that form a first junction termination of the device.