The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 19, 2025

Filed:

Jul. 11, 2022
Applicant:

Semiconductor Components Industries, Llc, Phoenix, AZ (US);

Inventors:

Alexander Viktorovich Bolotnikov, Niskayuna, NY (US);

Fredrik Allerstam, Solna, SE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 8/60 (2025.01); H10D 62/10 (2025.01); H10D 62/832 (2025.01);
U.S. Cl.
CPC ...
H10D 8/60 (2025.01); H10D 62/109 (2025.01); H10D 62/8325 (2025.01);
Abstract

In some aspects, the techniques described herein relate to a diode including: a substrate of a first conductivity type; a semiconductor layer of the first conductivity type disposed on the substrate, the semiconductor layer including a drift region; a shield region of a second conductivity type disposed in the semiconductor layer adjacent to the drift region; a surface region of the first conductivity type disposed in a first portion of the drift region adjacent to the shield region, the surface region having a doping concentration that is greater than a doping concentration of a second portion of the drift region adjacent to the surface region, the second portion of the drift region excluding the surface region; and a Schottky material disposed on: at least a portion of the shield region; the surface region in the first portion of the drift region; and the second portion of the drift region.


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