The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 19, 2023

Filed:

Jan. 10, 2022
Applicant:

General Electric Company, Schenectady, NY (US);

Inventors:

Stephen Daley Arthur, Glenville, NY (US);

Victor Mario Torres, Clifton Park, NY (US);

Michael J. Hartig, Schenectady, NY (US);

Reza Ghandi, Niskayuna, NY (US);

David Alan Lilienfeld, Niskayuna, NY (US);

Alexander Viktorovich Bolotnikov, Niskayuna, NY (US);

Assignee:

General Electric Company, Schenectady, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 31/0312 (2006.01); H01L 29/06 (2006.01); H01L 29/16 (2006.01); H01L 21/04 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0634 (2013.01); H01L 21/0465 (2013.01); H01L 29/0619 (2013.01); H01L 29/0623 (2013.01); H01L 29/1608 (2013.01); H01L 29/66068 (2013.01);
Abstract

A disclosed super-junction (SJ) device includes a first epitaxial (epi) layer that forms a first SJ layer of the SJ device, and includes a second epi layer disposed on the first SJ layer that forms a device layer of the SJ device. An active area of the first and second epi layers includes a first set of SJ pillars comprising a particular doping concentration of a first conductivity type and a second set of SJ pillars comprising the particular doping concentration of a second conductivity type. A termination area of the first and second epi layers has a minimized epi doping concentration of the first conductivity type that is less than the particular doping concentration, and the termination area of the second epi layer includes a plurality of floating regions of the second conductivity type that form a junction termination of the SJ device.


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