The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 2021
Filed:
Feb. 21, 2019
General Electric Company, Schenectady, NY (US);
Peter Almern Losee, Clifton Park, NY (US);
Reza Ghandi, Niskayuna, NY (US);
Alexander Viktorovich Bolotnikov, Niskayuna, NY (US);
GENERAL ELECTRIC COMPANY, Niskayuna, NY (US);
Abstract
A silicon carbide (SiC) semiconductor device may include a CB layer defined in a first epitaxial (epi) layer having a first conductivity type. The CB layer may include a plurality of CB regions having a second conductivity type. The SiC semiconductor device may further include a device epi layer having the first conductivity type disposed on the CB layer. The device epi layer may include a plurality of regions having the second conductivity type. Additionally, the SiC semiconductor device may include an ohmic contact disposed on the device epi layer and a rectifying contact disposed on the device epi layer. A field-effect transistor (FET) of the device may include the ohmic contact, and a diode of the device may include the rectifying contact, where the diode and the FET are integrated in the device.