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For the Inventor, By the Inventor

Monmouth Junction, NJ, United States of America

United Silicon Carbide, Inc.


USPTO Granted Patents = 31


Forward Citations = 205

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12 inventors (with patents filed for the assignee):

goldMedal Anup Bhalla (20 out of 297 patents)

silverMedal Leonid Fursin (7 out of 7 patents)

bronzeMedal Zhongda Li (7 out of 8 patents)

4.  Xueqing Li (7 out of 7 patents)

5.  Peter Alexandrov (3 out of 3 patents)

6.  Hao Zhang (2 out of 2 patents)

7.  Ke Zhu (2 out of 3 patents)

8.  Francisco Astrera Sudario (1 out of 1 patent)

9.  Jonathan Dodge (1 out of 1 patent)

10.  Xing Huang (1 out of 2 patents)

11.  John L Hostetler (1 out of 1 patent)

12.  Jian H Zhao (1 out of 6 patents)


Core Competencies:
Wide Bandgap
JFET
High Voltage Switch
Bipolar Switches
MOSFET
Trench Vertical JFET
Power Transistor
Heat Sinking
Cascode Circuit
Ohmic Contacts
Solid-State Disconnect
Chip Stack Assembly

31 patents:

1. 12653029 - Power block based on top-side cool surface-mount discrete devices with double-sided heat sinking (2026-06-09),
2. 12334917 - Voltage-source gate drive having shunt capacitors and shunt resistors (2025-06-17),
3. 11710662 - Reusable wide bandgap semiconductor substrate (2023-07-25),
4. 11211373 - Double-sided chip stack assembly (2021-12-28),
5. 10825733 - Reusable wide bandgap semiconductor substrate (2020-11-03),
6. 10673396 - Series-connected FETs in active linear mode (2020-06-02),
7. 10396215 - Trench vertical JFET with improved threshold voltage control (2019-08-27),
8. 10367099 - Trench vertical JFET with ladder termination (2019-07-30),
9. 10367098 - Vertical JFET made using a reduced masked set (2019-07-30),
10. 10147813 - Tunneling field effect transistor (2018-12-04),
11. 10121907 - Planar triple-implanted JFET (2018-11-06),
12. 10056500 - Vertical JFET made using a reduced mask set (2018-08-21),
13. 10050154 - Trench vertical JFET with ladder termination (2018-08-14),
14. 9917180 - Trenched and implanted bipolar junction transistor (2018-03-13),
15. 9866213 - High voltage switch module (2018-01-09),
Company Overview
United Silicon Carbide, Inc. specializes in the development and manufacturing of silicon carbide (SiC) power devices, which are integral to enhancing energy efficiency in various applications. The company focuses on high-performance semiconductor solutions that cater to industries such as renewable energy, electric vehicles, and industrial automation. Headquartered in Monmouth Junction, NJ, United Silicon Carbide is committed to advancing power electronics technology, providing innovative solutions that support the transition to a more sustainable energy landscape.
Profile summary synthesized from public USPTO records and patent filings.

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USPTO Data Jan 1 1976 - Oct 20 2026

United Silicon Carbide, Inc. USPTO Patent Assignee Logo
31 Patents

#4 in Monmouth Junction, NJ

#438 in New Jersey

#10,936 in US

#21,284 in the World

Monmouth Junction, NJ (US)
Monmouth Junction, NJ, United States of America

United Silicon Carbide, Inc.

Forward Citations = 205

12 inventors:

goldMedal Anup Bhalla (20 out of 297 patents)

silverMedal Leonid Fursin (7 out of 7 patents)

bronzeMedal Zhongda Li (7 out of 8 patents)

4.  Xueqing Li (7 out of 7 patents)

5.  Peter Alexandrov (3 out of 3 patents)

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: United Silicon Carbide, Inc.. Retrieved from https://idiyas.com/company/united-silicon-carbide

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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