The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2020
Filed:
Jan. 31, 2019
United Silicon Carbide, Inc., Monmouth Junction, NJ (US);
Jonathan Dodge, Lebanon, OR (US);
United Silicon Carbide, Inc., Monmouth Junction, NJ (US);
Abstract
The addition of gate bias resistors substantially balances the voltage across any number of series-connected FETs, while the feedback control of the gate-source voltage of one FET controls the current through all of the FETs. In this way, the thermal load and voltage stress are substantially balanced for series connected FETs operating in active linear mode (partially on), enabling operation at voltages much higher than the individual ratings of low cost, readily available FETs. Alternatively, series-connecting FETs for active-mode operation is thermally equivalent to paralleling because the FET heat load is practically uniform, enabling operation at much higher current. This concept is extended to a series connection of FETs that can block, pass, and/or limit alternating load current with the voltage applied across all the FETs being either polarity or alternating polarity. We provide analysis, practical design considerations, and simulation results.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile