This inventor holds 7 USPTO granted patents and 3 published patent applications. Top assignee: United Silicon Carbide, Inc.. Active years: 2015-2023.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2015-2023
Title: Leonid Fursin - Innovator in Wide Bandgap Semiconductor Technology
Introduction
Leonid Fursin is a prominent inventor based in Monmouth Junction, NJ (US), known for his significant contributions to the field of semiconductor technology. With a total of 7 patents to his name, Fursin has been instrumental in advancing the capabilities of wide bandgap semiconductors.
Latest Patents
One of his latest patents involves a reusable wide bandgap semiconductor substrate. This innovation allows for the construction of multiple wide bandgap semiconductor wafers, each equipped with active circuitry and an epitaxially formed backside drain contact layer. The process includes forming foundational layers on the bulk substrate via epitaxy, creating active circuitry atop these layers, and utilizing laser treatment to establish a cleave line for exfoliating semiconductor wafers. This method not only enhances the efficiency of semiconductor production but also allows for the creation of wafers containing foundational layers without complete active devices.
Career Highlights
Leonid Fursin currently works at United Silicon Carbide, Inc., where he continues to push the boundaries of semiconductor technology. His work has been pivotal in developing innovative solutions that leverage the unique properties of wide bandgap materials.
Collaborations
Throughout his career, Fursin has collaborated with notable professionals in the field, including Anup Bhalla and Xueqing Li. These collaborations have fostered a dynamic environment
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile