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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9721944 B1

PDFFull Text
Date of Patent:
Aug. 01, 2017

Filed:

Dec. 30, 2015

Hybrid wide-bandgap semiconductor bipolar switches

Applicant:

United Silicon Carbide, Inc., Monmouth Junction, NJ (US);

Inventors:

Leonid Fursin, Monmouth Junction, NJ (US);

Anup Bhalla, Princeton Junction, NJ (US);

Assignee:

United Silicon Carbide, Inc., Monmouth Junction, NJ (US);

Attorney:

Baker & Hostetler LLP

Primary Examiner:

Fernando L Toledo

Assistant Examiner:

Adam S Bowen

Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 29/16 (2006.01); H01L 29/78 (2006.01); H01L 29/808 (2006.01); H01L 29/861 (2006.01); H01L 29/739 (2006.01); H01L 21/82 (2006.01); H01L 23/495 (2006.01); H01L 29/74 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0635 (2013.01); H01L 21/8213 (2013.01); H01L 23/49562 (2013.01); H01L 23/49575 (2013.01); H01L 27/0623 (2013.01); H01L 29/1608 (2013.01); H01L 29/7395 (2013.01); H01L 29/7416 (2013.01); H01L 29/78 (2013.01); H01L 29/7802 (2013.01); H01L 29/808 (2013.01); H01L 29/8083 (2013.01); H01L 29/861 (2013.01); H01L 29/2003 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/73265 (2013.01); H01L 2924/13055 (2013.01);
Abstract

A hybrid semiconductor bipolar switch in which a normally-on high-voltage wide-bandgap semiconductor bipolar switch and a normally-off field effect transistor are connected in a cascode (Baliga-pair) configuration. The switch may be constructed as a stacked hybrid device where a discrete transistor is bonded on top of a bipolar switch. Power systems may use plural switches paired with anti-parallel diodes.

Find Patent Forward Citations

Fursin, Leonid. (2017). Hybrid wide-bandgap semiconductor bipolar switches (U.S. Patent No. 9721944). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9721944

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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