The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2018
Filed:
Feb. 10, 2015
Applicant:
United Silicon Carbide, Inc., Monmouth Junction, NJ (US);
Inventors:
Anup Bhalla, Princeton Junction, NJ (US);
Leonid Fursin, Monmouth Junction, NJ (US);
Assignee:
United Silicon Carbide, Inc., Monmouth Junction, NJ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/70 (2006.01); H01L 29/732 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/872 (2006.01); H01L 29/10 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01); H01L 29/73 (2006.01); H01L 29/861 (2006.01); H01L 29/06 (2006.01); H01L 27/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/732 (2013.01); H01L 27/0664 (2013.01); H01L 29/0619 (2013.01); H01L 29/1004 (2013.01); H01L 29/1608 (2013.01); H01L 29/2003 (2013.01); H01L 29/42304 (2013.01); H01L 29/6631 (2013.01); H01L 29/66068 (2013.01); H01L 29/66272 (2013.01); H01L 29/66295 (2013.01); H01L 29/73 (2013.01); H01L 29/8611 (2013.01); H01L 29/872 (2013.01);
Abstract
The present invention concerns a monolithically merged trenched-and-implanted Bipolar Junction Transistor (TI-BJT) with antiparallel diode and a method of manufacturing the same. Trenches are made in a collector, base, emitter stack downto the collector. The base electrode is formed on an implanted base contact region at the bottom surface of the trench. The present invention also provides for products produced by the methods of the present invention and for apparatuses used to perform the methods of the present invention.