The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 2018
Filed:
Sep. 15, 2016
United Silicon Carbide, Inc., Monmouth Junction, NJ (US);
Zhongda Li, Somerset, NJ (US);
Anup Bhalla, Princeton Junction, NJ (US);
United Silicon Carbide, Inc., Monmonth Junction, NJ (US);
Abstract
A vertical JFET made by a process using a limited number of masks. A first mask is used to form mesas and trenches in active cell and termination regions simultaneously. A maskless self-aligned process is used to form silicide source and gate contacts. A second mask is used to open windows to the contacts. A third mask is used to pattern overlay metallization. An optional fourth mask is used to pattern passivation. Optionally the channel may be doped via angled implantation, and the width of the trenches and mesas in the active cell region may be varied from those in the termination region.