The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 09, 2018

Filed:

Sep. 08, 2016
Applicant:

United Silicon Carbide, Inc., Monmouth Junction, NJ (US);

Inventors:

Hao Zhang, Plainsboro, NJ (US);

Xueqing Li, East Brunswick, NJ (US);

Anup Bhalla, Princeton Junction, NJ (US);

Assignee:

United Silicon Carbide, Inc., Monmouth Junction, NJ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/687 (2006.01); H01L 23/498 (2006.01); H01L 23/373 (2006.01); H01L 21/48 (2006.01); H01L 23/00 (2006.01); H01L 23/495 (2006.01);
U.S. Cl.
CPC ...
H03K 17/6871 (2013.01); H01L 21/4846 (2013.01); H01L 23/3731 (2013.01); H01L 23/49568 (2013.01); H01L 23/49575 (2013.01); H01L 23/49844 (2013.01); H01L 24/29 (2013.01); H01L 24/45 (2013.01); H01L 24/48 (2013.01); H01L 2224/29139 (2013.01); H01L 2224/45124 (2013.01); H01L 2224/45144 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/48225 (2013.01); H01L 2924/014 (2013.01);
Abstract

A high-voltage switch module, such as a cascode module, includes an electrically insulating heatsink with a patterned conductor layer on which high-voltage and low-voltage active semiconductor components are bonded, along with clamping, loading, and dynamic balancing components such as diodes, resistors, and capacitors. The heatsink may be alumina or aluminum nitride, for example. The conductor layer may be copper affixed to the heatsink via by direct-copper bonding or active metal brazing, for instance. High-voltage cascode modules may be formed using a low-voltage MOSFET in combination with a chain of silicon carbide normally-on n-channel JFET devices with a variety of configurations of clamping, loading, and balancing devices, for example.


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