North Brunswick, NJ, United States of America

Jian H Zhao

This inventor holds 6 USPTO granted patents and 5 published patent applications. Top assignees: US Government as Represented by the Secretary of the Army, Rutgers, The State University of New Jersey, United Silicon Carbide, Inc.. Active years: 1994-2009.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jian H Zhao. Retrieved from https://idiyas.com/inventor/jian-h-zhao

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 6 

% Patents Active = 100.0

Average Co-Inventor Count = 1.4

ph-index = 5

Forward Citations = 87(Granted Patents)


Company Filing History:


Years Active: 1994-2009

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6 patents (USPTO):Explore Patents

Title: The Innovations of Inventor Jian H Zhao

Introduction

Jian H Zhao is a distinguished inventor based in North Brunswick, NJ, who has made significant contributions to the field of semiconductor technology. With a total of six patents to his name, he is recognized for his innovative solutions in power semiconductor devices.

Latest Patents

Zhao's latest inventions include two notable patents that showcase his expertise in the design and functionality of power transistors. The first patent, titled "Power junction field effect power transistor with highly vertical channel and uniform channel opening," describes a sophisticated semiconductor vertical junction field effect power transistor. This innovative design features a semiconductor structure composed of multiple layers with specific doping concentrations, enabling efficient channel operation and uniformity in channel dimensions. The utilization of U-shaped trenches defines laterally spaced mesas, enhancing the performance of the transistor.

The second patent, "Double-gated vertical junction field effect power transistor," details a power semiconductor switch that integrates a low-voltage lateral junction field effect transistor (LJFET) controlling a high-voltage vertical junction field effect transistor (VJFET). This invention features a double-gated design that optimizes performance with buried layers and ion implantation techniques, demonstrating Zhao's forward-thinking approach in semiconductor technology.

Career Highlights

Throughout his career, Jian H Zhao has collaborated with notable institutions and organizations. He has worked with the US Government as represented by the Secretary of the Army, where his contributions have had a direct impact on military technology. Additionally, he has been associated with Rutgers, The State University of New Jersey, further emphasizing his involvement in academic and research-based innovations.

Collaborations

Zhao has collaborated with eminent professionals, including Thomas E. Koscica and Terence Burke. These collaborations reflect his ability to work alongside other experts in the field, contributing to the advancement of semiconductor technologies and their applications.

Conclusion

Jian H Zhao's innovative patents and collaboration with esteemed organizations underscore his role as a leading figure in semiconductor technology. His cutting-edge designs not only advance the capabilities of power transistors but also pave the way for future innovations in the field. As technology continues to evolve, inventors like Zhao play a critical role in shaping the landscape of engineering and electronics.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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