The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2025
Filed:
Aug. 30, 2023
United Silicon Carbide, Inc., Princeton, NJ (US);
Ke Zhu, Princeton, NJ (US);
UNITED SILICON CARBIDE, INC., Scottsdale, AZ (US);
Abstract
Disclosed is a device that decouples switching speed and gate delay time using an improved voltage-source gate driver. A shunt capacitor and a shunt resistor are connected in series to parallel across gate resistors of a voltage-source gate driver. The shunt capacitor and shunt resistor allow the gate delay and switching speed effect of the gate resistors to be decoupled. The shunt capacitor provides an initial high charge voltage and discharge gate current to reduce gate delay time. The shunt resistor modifies the effective gate resistance, which affects the gate current and the resulting switching speed. Shunt capacitor and shunt resistor values are determined to achieve the desired switching speed control with minimum gate delay time. When multiple power devices are paralleled, a common gate resistor, a shunt resistor and a capacitor combination is used. Each power device is also provided a respective split-gate resistor.