For the Inventor, By the Inventor

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Shanghai, China

Shanghai Ic R&d Center Co., Ltd

USPTO Granted Patents = 66

Forward Citations = 45

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74 inventors (with patents filed for the assignee):

Xiaoxu Kang (18 out of 19 patents)

Jianxin Wen (8 out of 8 patents)

Yuhang Zhao (8 out of 8 patents)

4. Chen Bo Li (6 out of 28 patents)

5. Jiebin Duan (5 out of 5 patents)

6. Hong Lin (5 out of 14 patents)

7. Min Zhong (5 out of 6 patents)

8. Huijie Yan (5 out of 5 patents)

9. Xi Zeng (5 out of 5 patents)

10. Shoumian Chen (5 out of 5 patents)

11. Jun Zhu (5 out of 42 patents)

12. Ling Shen (4 out of 18 patents)

13. Yu Jiang (4 out of 10 patents)

14. Changming Pi (4 out of 4 patents)

15. Wei Zhou (3 out of 84 patents)

Core Competencies:

Phase Change Memory

CMOS Imaging Sensor

Image Signal Detection

Infrared Detector

Neural Networks

Memory Array Structure

FinFET Device

Multispectral Image Sensor

Voltage-Controlled Magnetic RAM

Motion Detection Circuit

Analog-to-Digital Converter

MEMS Microphone

66 patents: Sort by Forward Citations

1. 12501627 - RRAM cell structure and fabrication method therefor (2025-12-16),

2. 12446478 - Phase change memory unit and preparation method therefor (2025-10-14),

3. 12446336 - CMOS imaging sensor structure and manufacturing method therefor (2025-10-14),

4. 12432471 - Image signal detection circuit, control method and motion detection method (2025-09-30),

5. 12426389 - Infrared detector having vertical sidewall sensitive layer and manufacturing method thereof (2025-09-23),

6. 12373679 - Single-layered linear neural network based on cell synapse structure (2025-07-29),

7. 12342550 - Memory array structure (2025-06-24),

8. 12288725 - Critical dimension error analysis method (2025-04-29),

9. 12279538 - Phase change memory unit and preparation method therefor (2025-04-14),

10. 12205268 - Recessed structure capable of being conveniently monitored online and preparation method thereof (2025-01-21),

11. 12154931 - Image sensor structure and formation method thereof (2024-11-26),

12. 12126331 - Clock circuit (2024-10-22),

13. 12080589 - Formation method of semiconductor structure (2024-09-03),

14. 12002708 - Method for forming intermetallic air gap (2024-06-04),

15. 12002682 - Tip-to-tip graphic preparation method (2024-06-04),

Shanghai IC R&D Center Co., Ltd is a leading research and development organization specializing in integrated circuit (IC) design and innovation. We provide cutting-edge solutions for various industries including consumer electronics, telecommunications, automotive, and smart devices. With a team of highly skilled engineers and advanced technology, we strive to deliver high-quality IC solutions that meet the specific requirements of our clients. Our commitment towards innovation, efficiency, and customer satisfaction has made us a trusted partner in the IC industry.

This text is generated by artificial intelligence and may not be accurate.

Company Badge

USPTO Data Jan 1 1976 - Dec 30 2025

66 Patents

#47 in Shanghai

#442 in China

#10,871 in the World

Shanghai, China

Shanghai Ic R&d Center Co., Ltd

Forward Citations = 45

74 inventors:

Xiaoxu Kang (18 out of 19 patents)

Jianxin Wen (8 out of 8 patents)

Yuhang Zhao (8 out of 8 patents)

4. Chen Bo Li (6 out of 28 patents)

5. Jiebin Duan (5 out of 5 patents)

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