The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2024
Filed:
Jul. 23, 2020
Shanghai Ic R&d Center Co., Ltd, Shanghai, CN;
SHANGHAI IC R&D CENTER CO., LTD, Shanghai, CN;
Abstract
The present invention disclosures a Tip-to-Tip pattern preparation method, comprising: providing a substrate, and sequentially forming a layer to be etched, a first hard mask layer, a second hard mask layer, a sacrificial layer, a first dielectric layer and a first photoresist layer on the substrate, forming a first patterned photoresist layer which has a first Tip-to-Tip pattern by EUV lithography, and transferring the first Tip-to-Tip pattern to the second hard mask layer by etching; then forming a second patterned photoresist layer which has a second Tip-to-Tip pattern by the EUV lithography, and transferring the second Tip-to-Tip pattern to the second hard mask layer by etching; finally, transferring the first Tip-to-Tip pattern and the second Tip-to-Tip pattern to the layer to be etched. The above method needs only performing the EUV lithography twice to form the small-sized Tip-to-Tip pattern with a period halved, that is, the EUV lithography and etching are used for reducing lithography layers and realizing to form the small-sized Tip-to-Tip pattern with the period halved.