The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2025
Filed:
Oct. 14, 2019
Shanghai Ic R&d Center Co., Ltd., Shanghai, CN;
Shanghai Integrated Circuit Equipment & Materials Industry Innovation Center Co., Ltd, Shanghai, CN;
Xiaoxu Kang, Shanghai, CN;
Ming Li, Shanghai, CN;
SHANGHAI IC R&D CENTER CO., LTD., Shanghai, CN;
Shanghai Integrated Circuit Equipment & Materials Industry Innovation Center Co. Ltd, Shanghai, CN;
Abstract
A CMOS imaging sensor structure and a manufacturing method therefor. The CMOS imaging sensor structure comprises a pixel unit of the CMOS imaging sensor set on a semiconductor substrate, the pixel unit comprises a circuit device region and a first photosensitive region, the circuit device region is set on the frontside of the semiconductor substrate, the first photosensitive region is set correspondingly in the semiconductor substrate below the circuit device region, the circuit device region is isolated from the first photosensitive region by an isolation region, and the circuit device region is electrical connected with the first photosensitive region through a conductive trench, a fill factor of a photosensitive region is increased, and performances of a reading circuit is increased by a more optimized design scheme. A second photosensitive region of the pixel unit can also be set on the semiconductor substrate on a side of the circuit device region, thus a larger photosensitive region can be formed together with the first photosensitive region. The present invention also provides a manufacturing method for the CMOS imaging sensor structure.