The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2024
Filed:
Dec. 04, 2019
Shanghai Ic R&d Center Co., Ltd., Shanghai, CN;
Shanghai Integrated Circuit Equipment & Materials Industry Innovation Center Co., Ltd, Shanghai, CN;
SHANGHAI IC R&D CENTER CO., LTD., Shanghai, CN;
SHANGHAI INTEGRATED CIRCUIT EQUIPMENT & MATERIALS INDUSTRY INNOVATION CENTER CO., LTD, Shanghai, CN;
Abstract
The present invention discloses a method for forming an intermetallic air gap, which comprises following steps: S01: forming a trench in a solid dielectric; S02: preparing an insulating sheet-like two-dimensional material, wherein the insulating sheet-like two-dimensional material comprises an insulating nano sheet-like layer, the size of the insulating nano sheet-like layer in the sheet-like two-dimensional direction is greater than the size of the trench; S03: the insulating sheet-like two-dimensional material is deposited on the solid dielectric and the trench; S04: annealing the solid dielectric and the insulating sheet-like two-dimensional material to form a stable thin film composed of insulating sheet-like two-dimensional material on the trench. The method for forming an intermetallic air gap provided by the present disclosure can effectively increase the intermetallic air gap formation ratio, and greatly reduce the effective dielectric constant and interconnection delay, further reduce costs, and improve product performance.