The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2025
Filed:
Jun. 30, 2017
Applicant:
Shanghai Ic R&d Center Co., Ltd., Shanghai, CN;
Inventor:
Xiaoxu Kang, Shanghai, CN;
Assignee:
SHANGHAI IC R&D CENTER CO., LTD., Shanghai, CN;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10F 39/18 (2025.01); G01J 5/02 (2022.01); G01J 5/10 (2006.01); G01J 5/20 (2006.01); H10F 39/00 (2025.01);
U.S. Cl.
CPC ...
H10F 39/184 (2025.01); G01J 5/024 (2013.01); G01J 5/10 (2013.01); G01J 5/20 (2013.01); H10F 39/014 (2025.01); H10F 39/80 (2025.01);
Abstract
The present disclosure provided an infrared detector having a vertical sidewall sensitive layer and a manufacturing method thereof. By forming at least one fin structure on a semiconductor substrate; and a sensitive layer can be formed on the sidewall of the fin structure by ion implantation. The vertical sidewall sensitive layer is configured to reduce the impact of lithography on the sensitive layer, thereby reducing the impact on the sensitivity of the sensitive layer ().