The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2025
Filed:
Dec. 24, 2021
Shanghai Ic R&d Center Co., Ltd., Shanghai, CN;
Min Zhong, Shanghai, CN;
Gaoming Feng, Shanghai, CN;
SHANGHAI IC R&D CENTER CO., LTD., Shanghai, CN;
Abstract
The present invention is to provide a phase change memory unit and preparation method thereof. The phase change memory comprises a bottom electrode, a phase change cell, a heating electrode and a top electrode on a substrate from bottom to top. The phase change cell is a column vertically connected to the bottom electrode, which sequentially comprise a columnar phase change material layer, a hollow columnar heat dissipation layer and a hollow columnar switch layer from inside to outside. The top electrode, the heating electrode and the phase change material layer are connected sequentially from top to bottom, the switch layer is connected to the bottom electrode. The present invention adopts a heat dissipation layer wrapping around the phase change material layer to make the current density and the heat distribution more concentrated, thus to keep the effective phase transition region unchanged, reduce the volume of the effective phase transition region and the power consumption, and increase the device reliability.