This inventor holds 2 USPTO granted patents. Top assignees: Shanghai Ic R&d Center Co., Ltd, Shanghai Integrated Circuit Equipment & Materials Industry Innovation Center Co., Ltd. Active years: 2025.
Company Filing History:
2 out of 66 
1 out of 9 Years Active: 2025
Title: Gaoming Feng: Innovator in Phase Change Memory Technology
Introduction
Gaoming Feng is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of memory technology, particularly in the development of phase change memory units. With a total of 2 patents to his name, Feng's work is paving the way for advancements in data storage solutions.
Latest Patents
Feng's latest patents focus on innovative designs for phase change memory units. The first patent describes a phase change memory unit that includes a bottom electrode, a phase change cell, a heating electrode, and a top electrode arranged on a substrate. This design features a columnar phase change material layer, a hollow columnar heat dissipation layer, and a hollow columnar switch layer. The heat dissipation layer enhances current density and heat distribution, improving device reliability and reducing power consumption.
The second patent also pertains to a phase change memory unit, which comprises a bottom electrode, a heating electrode, and a top electrode, with a longitudinally arranged column as the phase change unit. This design incorporates a cylindrical selector layer, a circular barrier layer, and a circular phase change material layer. The use of trench sidewall deposition or via filling allows for a circular nested structure, which significantly improves the reliability of the device and reduces the volume of the phase change operation area.
Career Highlights
Feng has worked with notable companies such as Shanghai IC R&D Center Co., Ltd and Shanghai Integrated Circuit Equipment & Materials Industry Innovation Center Co., Ltd. His experience in these organizations has contributed to his expertise in the field of integrated circuit technology and memory solutions.
Collaborations
Feng has collaborated with several professionals in his field, including Min Zhong and Jun Zhu. These collaborations have likely enriched his research and development efforts, leading to innovative solutions in memory technology.
Conclusion
Gaoming Feng is a key figure in the advancement of phase change memory technology. His innovative patents and career achievements reflect his commitment to enhancing data storage solutions. His work continues to influence the future of memory technology.