The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 16, 2025

Filed:

Jul. 23, 2020
Applicants:

Shanghai Integrated Circuit Equipment & Materials Industry Innovation Center Co., Ltd., Shanghai, CN;

Shanghai Ic R&d Center Co., Ltd., Shanghai, CN;

Inventor:

Ao Guo, Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 63/00 (2023.01); H10N 70/00 (2023.01);
U.S. Cl.
CPC ...
H10B 63/34 (2023.02); H10N 70/011 (2023.02);
Abstract

The present invention disclosures a RRAM cell structure, comprising a first transistor and a second transistor which are connected in parallel and commonly connected to a resistive switching device; wherein, the first transistor is set with a first gate, a first source and a first drain, a first control signal is applied to the first gate, and a first source signal is applied to the first source; the second transistor is set with a second gate, a second source and a second drain, a second control signal is applied to the second gate, and a second source signal is applied to the second source; the first drain is connected with the second drain, which are commonly connected to one terminal of the resistive switching device, and a bit signal is applied to another terminal of the resistive switching device. The present invention uses cell area of a traditional 1T1R to manufacture a 2T1R cell structure, which can take into account various operating voltage requirements of the resistive switching device simultaneously, so as to significantly improve cell performances thereof.


Find Patent Forward Citations

Loading…