IDiyas

For the Inventor, By the Inventor

Santa Clara, CA, United States of America

Integrated Silicon Solution Incorporated


USPTO Granted Patents = 100


Trademarks = 9

Forward Citations = 1,013

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89 inventors (with patents filed for the assignee):

goldMedal Paul Cheng (10 out of 12 patents)

silverMedal Nelson L Chow (9 out of 9 patents)

bronzeMedal Paul Jei-Zen Song (9 out of 13 patents)

4.  Yong H Jiang (8 out of 9 patents)

5.  Seong Jun Jang (7 out of 8 patents)

6.  Kyoung Chon Jin (7 out of 7 patents)

7.  Sun Byeong Yoon (6 out of 6 patents)

8.  Hsi-Hsien Hung (5 out of 6 patents)

9.  Seung Cheol Bae (4 out of 4 patents)

10.  Kwang Kyung Lee (4 out of 4 patents)

11.  Sung Jin Yoo (4 out of 6 patents)

12.  Fangli Chien (4 out of 6 patents)

13.  Justin Kim (4 out of 4 patents)

14.  Geun-Young Park (4 out of 6 patents)

15.  Eungjoon Park (4 out of 27 patents)


Core Competencies:
Memory Device
Low Power Management
FINFET Technology
Flash Memory
Error Correction
Wafer-Bonding
Dynamic Linking
Content Addressable Memory
Calibration Circuit
Synchronous Circuits
Resistive Memory
Power Supply Management

100 patents:

1. 12266418 - Memory device having row driver circuits for reducing leakage currents during power off (2025-04-01),
2. 12260930 - Memory core characteristic screening method and system thereof (2025-03-25),
3. 12237669 - Semiconductor integrated circuit (2025-02-25),
4. 12183411 - Memory interface circuitry and built-in self-testing method (2024-12-31),
5. 12119041 - Signal synchronization adjustment method and signal synchronization adjustment circuit (2024-10-15),
6. 12021059 - Wafer-bonding structure and method of forming thereof (2024-06-25),
7. 11951571 - Method of forming package structure (2024-04-09),
8. 11894043 - Power management circuit in low-power double data rate memory and management method thereof (2024-02-06),
9. 11841722 - Controlling circuit for low-power low dropout regulator and controlling method thereof (2023-12-12),
10. 11616145 - FINFET stack gate memory and method of forming thereof (2023-03-28),
11. 11612965 - Method of forming package structure (2023-03-28),
12. 11378620 - Method and system for detecting abnormal die (2022-07-05),
13. 11195592 - Memory inspecting method and memory inspecting system (2021-12-07),
14. 11115006 - Internal latch circuit and method for generating latch signal thereof (2021-09-07),
15. 10832747 - Clocked commands timing adjustments method in synchronous semiconductor integrated circuits (2020-11-10),
Integrated Silicon Solution Incorporated (ISSI) is a fabless semiconductor company that designs and markets a wide range of integrated circuits for various applications. With a focus on providing solutions for automotive, communications, industrial, and digital consumer markets, ISSI offers high-performance, low-power, and cost-effective products. Headquartered in Milpitas, California, ISSI operates globally with sales offices and design centers in key locations worldwide.
This text is generated by artificial intelligence and may not be accurate.

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USPTO Data Jan 1 1976 - Dec 9 2025

100 Patents

#54 in Santa Clara, CA

#855 in California

#3,647 in US

#7,548 in the World

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Santa Clara, CA, United States of America

Integrated Silicon Solution Incorporated

Forward Citations = 1,013

89 inventors:

goldMedal Paul Cheng (10 out of 12 patents)

silverMedal Nelson L Chow (9 out of 9 patents)

bronzeMedal Paul Jei-Zen Song (9 out of 13 patents)

4.  Yong H Jiang (8 out of 9 patents)

5.  Seong Jun Jang (7 out of 8 patents)

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