The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2023
Filed:
Dec. 28, 2021
Integrated Silicon Solution Inc., Milpitas, CA (US);
Hsingya Arthur Wang, Milpitas, CA (US);
INTEGRATED SILICON SOLUTION INC., Milpitas, CA (US);
Abstract
A method of forming a FinFET stack gate memory includes a nitride film forming step, a nitride film is formed on a memory cell area with a shallow trench isolation (STI) structure; a stripping step, a portion of the nitride film is stripped, the other portion of the nitride film is remained at the STI structure, and a STI oxide is disposed in the STI structure; a floating gate (FG) structure forming step, a tunnel oxide is disposed, and a first polysilicon is disposed to form a FG structure; an oxide-nitride-oxide (ONO) layer disposing step, a portion of the STI oxide is stripped, and an ONO layer is disposed; a removing step, a portion of the ONO layer is removed; a control gate (CG) structure forming step, a portion of the FG structure is removed, and a second polysilicon is disposed to form a CG structure.