The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2022
Filed:
Jul. 31, 2020
Integrated Silicon Solution Inc., Milpitas, CA (US);
Shou-Kang Fan, Milpitas, CA (US);
Lien-Sheng Yang, Milpitas, CA (US);
INTEGRATED SILICON SOLUTION INC., Milpitas, CA (US);
Abstract
A method for detecting an abnormal die includes providing a wafer, determining the surrounding dies in accordance with a position of a target die on the wafer, calculating a difference between a value of an electrical characteristic of each of the surrounding dies and a value of an electrical characteristic of the target die to obtain the electrical characteristic deviations, ranking the absolute values of the electrical characteristic deviations to generate a ranking result, and determining the characteristic-related dies from the surrounding dies in accordance with the ranking result, determining a target-related area in accordance with the position of the target die, determining the target-related die from the characteristic-related dies in accordance with the target-related area and determining whether the target die is qualified in accordance with the target-related die.