The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 07, 2021

Filed:

Oct. 23, 2020
Applicant:

Integrated Silicon Solution Inc., Milpitas, CA (US);

Inventors:

Kangmin Lee, Milpitas, CA (US);

Sangmin Jun, Milpitas, CA (US);

Youngjin Yoon, Milpitas, CA (US);

Seung Cheol Bae, Milpitas, CA (US);

Kwang Kyung Lee, Milpitas, CA (US);

Sun Byeong Yoon, Milpitas, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 3/037 (2006.01); H03K 5/13 (2014.01); G11C 11/4076 (2006.01);
U.S. Cl.
CPC ...
H03K 3/037 (2013.01); G11C 11/4076 (2013.01); H03K 5/13 (2013.01);
Abstract

An internal latch circuit having a plurality of low initial value D flip-flops, a plurality of high initial value D flip-flops, an internal latch signal generating circuit and a NAND gate, and a method for generating latch signal thereof is provided. First, an input delay signal in response to a clock signal is generated. Then, a first internal input signal, a first reverse internal input signal, a second internal input signal, and a second reverse internal input signal are generated by using the low initial value D flip-flops and the high initial value D flip-flops, based on the internal data strobe signal and in response to the input delay signal, and are transmitted to the internal latch signal generating circuit. Then, the internal latch signal generating circuit outputs the first reverse pre-output signal and the second reverse pre-output signal. Finally, an internal latch signal is generated through a NAND gate.


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