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For the Inventor, By the Inventor

Suzhou, China

Gpower Semiconductor, Inc.

USPTO Granted Patents = 16


Forward Citations = 17

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13 inventors (with patents filed for the assignee):

goldMedal Yi Pei (10 out of 18 patents)

silverMedal Yuan Li (4 out of 7 patents)

bronzeMedal Feihang Liu (3 out of 3 patents)

4.  Shufeng Zhao (2 out of 3 patents)

5.  Hongwei Chen (2 out of 5 patents)

6.  Chuanjia Wu (2 out of 2 patents)

7.  Qiang Liu (1 out of 18 patents)

8.  Naiqian Zhang (1 out of 1 patent)

9.  Mengjie Zhou (1 out of 1 patent)

10.  Xingxing Wu (1 out of 4 patents)

11.  Junfeng Wu (1 out of 3 patents)

12.  Guangmin Deng (1 out of 1 patent)

13.  Mao Hu (1 out of 1 patent)


16 patents:

1. 12418236 - Dual output energy conversion device, modulation method and power supply device (2025-09-16),
2. 12278293 - Semiconductor device comprising a doped epitaxial layer and method of manufacturing the same (2025-04-14),
3. 12272743 - Semiconductor device comprising a drain back contact electrode, method of manufacturing the same, and semiconductor package structure (2025-04-08),
4. 11456377 - Semiconductor device and method for manufacturing the same (2022-09-27),
5. 10978564 - Semiconductor device and method of manufacturing the same (2021-04-13),
6. 10825767 - Semiconductor packaging structure and semiconductor device (2020-11-03),
7. 10672917 - Schottky barrier rectifier (2020-06-02),
8. 10439029 - Field plate power device and method of manufacturing the same (2019-10-08),
9. 10367101 - Schottky diode and method of manufacturing the same (2019-07-30),
10. 10361271 - Semiconductor device and method of manufacturing the same (2019-07-23),
11. 10312176 - Semiconductor device (2019-06-04),
12. 10256333 - High electron mobility transistor (2019-04-09),
13. 10163811 - Semiconductor package structure based on cascade circuits (2018-12-25),
14. 10103219 - Power semiconductor device and method for manufacturing the same (2018-10-16),
15. 10068974 - Field plate power device and method of manufacturing the same (2018-09-04),
Company Overview
Gpower Semiconductor, Inc. is a technology company based in Suzhou, China, specializing in the development and manufacturing of advanced semiconductor solutions. The company focuses on power management ICs and high-efficiency power devices, catering to various sectors including consumer electronics, automotive, and industrial applications. Gpower is committed to innovation in semiconductor technology, aiming to enhance energy efficiency and performance across its product offerings.
Profile summary synthesized from public USPTO records and patent filings.

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USPTO Data Jan 1 1976 - Oct 20 2026

16 Patents

#32 in Suzhou

#1,817 in China

#37,868 in the World

Suzhou, CN
Suzhou, China

Gpower Semiconductor, Inc.

Forward Citations = 17

13 inventors:

goldMedal Yi Pei (10 out of 18 patents)

silverMedal Yuan Li (4 out of 7 patents)

bronzeMedal Feihang Liu (3 out of 3 patents)

4.  Shufeng Zhao (2 out of 3 patents)

5.  Hongwei Chen (2 out of 5 patents)

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: Gpower Semiconductor, Inc.. Retrieved from https://idiyas.com/company/gpower-semiconductor

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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