The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2019
Filed:
Apr. 03, 2017
Gpower Semiconductor, Inc., Suzhou, CN;
Yi Pei, Suzhou, CN;
Mengjie Zhou, Suzhou, CN;
GPOWER SEMICONDUCTOR, INC., Suzhou, CN;
Abstract
A semiconductor device comprises: a substrate; a multi-layer semiconductor layer located on the substrate, the multi-layer semiconductor layer being divided into an active area and a passive area outside the active area; a gate electrode, a source electrode and a drain electrode all located on the multi-layer semiconductor layer and within the active area; and a heat dissipation layer covering at least one portion of the active area and containing a heat dissipation material. In embodiments of the present invention, a heat dissipation layer covering at least one portion of the active area is provided in the semiconductor device. The arrangement of the heat dissipation layer adds a heat dissipation approach for the semiconductor device in the planar direction, thus the heat dissipation effect of the semiconductor device is improved.