The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2018
Filed:
Aug. 30, 2016
Gpower Semiconductor, Inc., Suzhou, CN;
Shufeng Zhao, Suzhou, CN;
GPOWER SEMICONDUCTOR, INC., Suzhou, CN;
Abstract
A semiconductor package structure comprises: a high-voltage depletion type semiconductor transistor comprising a source electrode, a gate electrode and a drain electrode; a low-voltage enhancement type semiconductor transistor comprising a source electrode, a gate electrode and a drain electrode; a shell comprising a cavity for receiving the high-voltage depletion type semiconductor transistor and the low-voltage enhancement type semiconductor transistor, and a high-voltage terminal, a first low-voltage terminal and a second low-voltage terminal; and cascade circuits comprising a supporting sheet having a conductive surface. The source electrode of the high-voltage depletion type transistor and the drain electrode of the low-voltage enhancement type semiconductor transistor are fixed to the conductive surface of the supporting sheet and electrically connected to each other through the conductive surface of the supporting sheet. A side of the supporting sheet away from the conductive surface is fixed to the cavity of the shell.