The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2019
Filed:
Mar. 17, 2017
Gpower Semiconductor, Inc., Suzhou, CN;
Yi Pei, Suzhou, CN;
GPOWER SEMICONDUCTOR, INC., Suzhou, CN;
Abstract
The embodiments of the present invention disclose a high electron mobility transistor, comprising: a substrate; a channel layer located on the substrate; a barrier layer located on the channel layer; a source electrode, a drain electrode, and a schottky gate electrode located between the source electrode and the drain electrode, all located on the barrier layer; and at least one semiconductor field ring located on the barrier layer and between the schottky gate electrode and the drain electrode. In the embodiments of the present invention, a concentration of two-dimensional electron gas at an interface between a barrier layer and a channel layer can be adjusted. Therefore, the concentration effect of the electric field at an edge of a gate is effectively improved, and the breakdown voltage of high electron mobility transistors is increased.