The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2022
Filed:
Apr. 30, 2020
Gpower Semiconductor Inc., Suzhou, CN;
Chuanjia Wu, Suzhou, CN;
GPOWER SEMICONDUCTOR INC., Suzhou, CN;
Abstract
The semiconductor device includes: a substrate; a semiconductor layer disposed on one side of the substrate, the semiconductor layer including a channel layer and a barrier layer, and a two-dimensional electron gas being formed at an interface between the channel layer and the barrier layer; a source, a gate, and a drain disposed on one side of the semiconductor layer away from the substrate; and at least two drain junction terminals located on the side of the semiconductor layer away from the substrate and disposed at intervals between the gate and the drain, the at least two drain junction terminals being electrically connected to the drain respectively. In the embodiments of the present application, the on-resistance of the device can be reduced while the current collapse phenomenon is eliminated, thereby improving the long-term reliability of the device.