The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 04, 2018

Filed:

Feb. 25, 2017
Applicant:

Gpower Semiconductor, Inc., Suzhou, CN;

Inventors:

Yuan Li, Nijmegen, NL;

Yi Pei, Suzhou, CN;

Feihang Liu, Suzhou, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 29/778 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/402 (2013.01); H01L 29/401 (2013.01); H01L 29/7786 (2013.01); H01L 29/4236 (2013.01); H01L 29/42368 (2013.01); H01L 29/42376 (2013.01);
Abstract

A field plate power device comprises: a substrate; a multilayer semiconductor layer disposed on the substrate; a source electrode, a drain electrode, and a gate electrode located between the source electrode and the drain electrode disposed on the multilayer semiconductor layer; a dielectric layer disposed on the gate electrode, a part of the multilayer semiconductor layer between the gate electrode and the source electrode and another part of the multilayer semiconductor layer between the gate electrode and the drain electrode; a groove disposed in a part of the dielectric layer between the gate electrode and the drain electrode; and a field plate disposed on the groove. The field plate comprises a first portion away from the gate electrode in a horizontal direction, the first portion has an overall upward tilted shape in the horizontal direction away from the gate electrode.


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