The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 13, 2021
Filed:
Nov. 23, 2018
Applicant:
Gpower Semiconductor, Inc., Suzhou, CN;
Inventor:
Yuan Li, Suzhou, CN;
Assignee:
GPOWER SEMICONDUCTOR, INC., Suzhou, CN;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 29/778 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/402 (2013.01); H01L 29/0649 (2013.01); H01L 29/408 (2013.01); H01L 29/66462 (2013.01); H01L 29/66477 (2013.01); H01L 29/66568 (2013.01); H01L 29/7786 (2013.01); H01L 29/78 (2013.01); H01L 29/2003 (2013.01);
Abstract
The present disclosure relates to a semiconductor device and a method of manufacturing the same. The semiconductor device includes a semiconductor layer; a source electrode, a drain electrode and a gate electrode located between the source electrode and the drain electrode disposed on a side of the semiconductor layer; at least two dielectrics located between the gate electrode and the drain electrode, wherein a dielectric coefficient of a dielectric adjacent to the gate electrode is greater than that of a dielectric away from the gate electrode and adjacent to the drain electrode.