SuZhou, China

Guangmin Deng

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Gpower Semiconductor, Inc.. Active years: 2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Guangmin Deng. Retrieved from https://idiyas.com/inventor/guangmin-deng

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Innovations of Guangmin Deng in Semiconductor Technology

Introduction

Guangmin Deng is a notable inventor based in SuZhou, China. He has made significant contributions to the field of semiconductor technology. His work focuses on developing advanced semiconductor devices that enhance performance and efficiency.

Latest Patents

Guangmin Deng holds a patent for a semiconductor device comprising a doped epitaxial layer and a method of manufacturing the same. This patent describes a semiconductor device that includes a substrate, a doped epitaxial layer, a channel layer, a potential barrier layer, and electrodes. The design allows for improved electrical characteristics, making it a valuable innovation in the semiconductor industry.

Career Highlights

Guangmin Deng is associated with Gpower Semiconductor, Inc., where he applies his expertise in semiconductor technology. His work at the company has contributed to advancements in the manufacturing and design of semiconductor devices.

Collaborations

Guangmin Deng collaborates with Yi Pei, a coworker at Gpower Semiconductor, Inc. Together, they work on innovative projects that push the boundaries of semiconductor technology.

Conclusion

Guangmin Deng's contributions to semiconductor technology through his patent and work at Gpower Semiconductor, Inc. highlight his role as an influential inventor in the field. His innovations continue to shape the future of semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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