The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2013
Filed:
Jul. 19, 2011
Akira Koshiishi, Nirasaki, JP;
Masaru Sugimoto, Nirasaki, JP;
Kunihiko Hinata, Nirasaki, JP;
Noriyuki Kobayashi, Nirasaki, JP;
Chishio Koshimizu, Nirasaki, JP;
Ryuji Ohtani, Nirasaki, JP;
Kazuo Kibi, Nirasaki, JP;
Masashi Saito, Nirasaki, JP;
Naoki Matsumoto, Nirasaki, JP;
Yoshinobu Ohya, Nirasaki, JP;
Manabu Iwata, Nirasaki, JP;
Daisuke Yano, Minami-Alps, JP;
Yohei Yamazawa, Nirasaki, JP;
Hidetoshi Hanaoka, Nirasaki, JP;
Toshihiro Hayami, Nirasaki, JP;
Hiroki Yamazaki, Nirasaki, JP;
Manabu Sato, Nirasaki, JP;
Akira Koshiishi, Nirasaki, JP;
Masaru Sugimoto, Nirasaki, JP;
Kunihiko Hinata, Nirasaki, JP;
Noriyuki Kobayashi, Nirasaki, JP;
Chishio Koshimizu, Nirasaki, JP;
Ryuji Ohtani, Nirasaki, JP;
Kazuo Kibi, Nirasaki, JP;
Masashi Saito, Nirasaki, JP;
Naoki Matsumoto, Nirasaki, JP;
Yoshinobu Ohya, Nirasaki, JP;
Manabu Iwata, Nirasaki, JP;
Daisuke Yano, Minami-Alps, JP;
Yohei Yamazawa, Nirasaki, JP;
Hidetoshi Hanaoka, Nirasaki, JP;
Toshihiro Hayami, Nirasaki, JP;
Hiroki Yamazaki, Nirasaki, JP;
Manabu Sato, Nirasaki, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A plasma processing apparatus includes a processing container, an exhaust unit, an exhaust plate, an RF power application unit connected to a second electrode but not connected to the first electrode and configured to apply an RF power with a single frequency, the second electrode being connected to no power supply that applies an RF power other than the RF power with the single frequency, a DC power supply connected to the first electrode but not connected to the second electrode, the first electrode being connected to no power supply that applies an RF power, and a conductive member within the process container grounded to release through plasma a current caused by the DC voltage, the conductive member supported by the first shield part and laterally protruding therefrom only at a position that is located, in a height-wise direction, between a mount face and the exhaust plate and below a bottom of a focus ring.